This part of IEC 63275 gives the test method and a procedure using this method to evaluate the on-state voltage change, on-state resistance change and reverse drain voltage change of silicon carbide (SiC) power MOSFET devices due to body diode operation. This test is not generally requested for Si power transistors.
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IEC 63275-2 Ed. 1.0 b:2022
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Semiconductor devices – Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors – Part 2: Test method for bipolar degradation due to body diode operation
International Electrotechnical Commission , 05/01/2022
Pages: 24
